| PART |
Description |
Maker |
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| GVT71512ZC18-5I GVT71512ZC18-6I CY7C1356A-133ACI C |
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.2 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| TC55V16366FF-133 |
512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
|
Toshiba Corporation
|
| AS7C33512PFD32_36A AS7C33512PFD32_36A.V1.3 AS7C335 |
3.3V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.4 ns, PQFP100
3.3V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1386C-167BZI CY7C1386C-167AI CY7C1386C-200AI C |
18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1370DV25 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM（NoBL结构 18兆位（为512k × 36/1M × 18）与总线延迟建筑18 MB的（12k × 36/1M × 18）管道式静态存储器（总线延迟结构）流水线的SRAM
|
Cypress Semiconductor Corp.
|
| CY7C1380F-200BGXI CY7C1380F-167BGXI CY7C1380D-250B |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| CY7C1460AV33-167AXC CY7C1460AV33 CY7C1460AV33-167A |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| CY7C1460AV25-250AXC CY7C1460AV25-250AXI CY7C1460AV |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| CY7C1370D-167AXI CY7C1370D-167BGC CY7C1370D-250BZC |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL垄芒 Architecture
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL?/a> Architecture
|
Cypress Semiconductor
|
| CY7C1370D-250BZI CY7C1372D-167BGC CY7C1372D-167BZC |
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 3.4 ns, PQFP100
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA165
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
